BFR380FH6327XTSA1

Infineon

9V 380mW 90@40mA,3V 80mA NPN TSFP-3 Bipolar Transistors - BJT ROHS Trans RF BJT NPN 6V 0.08A Automotive 3-Pin TSFP T/R Transistor Polarity = NPN / Continuous Collector Current (Ic) mA = 80 / Collector-Emitter Voltage (Vceo) V = 6 / DC Current Gain (hFE) = 120 / Collector-Base Voltage (Vcbo) V = 15 / Emitter-Base Voltage (Vebo) V = 2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 14 / Power Dissipation (Pd) mW = 380 / Package Type = SOT-723 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel NPN Silicon RF Transistor | Summary of Features: High linearity low noise driver amplifier; Output compression point 19.5 dBm @ 1.8 GHz; Ideal for oscillators up to 3.5 GHz; Low noise figure 1.1 dB at 1.8 GHz; Collector design supports 5V supply voltage; Pb-free (RoHS compliant) package; Qualification report according to AEC-Q101 available | Target Applications: Wireless Communications; LNA in RF Front-end; For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems. Transistor, RF TSFP3; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:6V; Transition Frequency Typ ft:9GHz; Power Dissipation Pd:380mW; DC Collector Current:80mA; DC Current Gain hFE:120; Operating Temperature Range:-65°C to +150°C; RF Transistor Case:TSFP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Associated Gain Ga:13.5dB; Continuous Collector Current Ic:80mA; Continuous Collector Current Ic Max:80mA; Current Ic Continuous a Max:80mA; Current Ic hFE:40mA; Gain Bandwidth ft Min:6GHz; Gain Bandwidth ft Typ:9GHz; Hfe Min:60; No. of Transistors:1; Noise Figure Typ:1.1dB; Output @ Third Order Intercept Point IP3:29dB; Package / Case:TSFP3; Power @ 1dB Gain Compression, P1dB:16dBm; Power Dissipation Ptot Max:380mW; SMD Marking:FCs; Termination Type:SMD; Test Frequency:1.8GHz; Transistor Case Style:TSFP; Voltage Vcbo:15V