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STL8N6LF6AG

意法-ST

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology,with a new trench gate structure. The resulting Power MOSFET exhibits very lowRDS(on)in all packages.

  • PDF:

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  • Package: PowerFLAT 5x6 WF
  • ROHS:
  • Status: -
  • Stock: 2028
  • Series: -

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